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| SUP60N10-16L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 FEATURES rDS(on) (W) ID (A) 60 56 0.016 @ VGS = 10 V 0.018 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized APPLICATIONS D DC/DC Primary Side Switch TO-220AB D G DRAIN connected to TAB GDS Top View SUP60N10-16L S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 100 "20 60 35 100 40 80 150b - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (Free Air) Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 62.5 1.0 Unit _C/W Document Number: 71928 S-03600--Rev. B, 31-Mar-03 www.vishay.com 1 SUP60N10-16L Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 80 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C VDS = 80 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 30 A 25 100 0.0125 0.014 0.016 0.018 0.030 0.040 S W 100 V 1 3 "100 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf VDD = 50 V, RL = 0.83 W ID ^ 60 A, VGEN = 10 V, RG = 2.5 W VDS = 50 V, VGS = 10 V, ID = 60 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 3820 450 210 73 15 20 1.5 12 90 55 130 25 135 85 195 ns W 110 nC pF Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms , m IF = 60 A, VGS = 0 V 1.0 62 3.1 0.10 60 100 1.5 100 5 0.25 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71928 S-03600--Rev. B, 31-Mar-03 SUP60N10-16L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 VGS = 10 thru 6 V 5V 100 I D - Drain Current (A) I D - Drain Current (A) 90 120 Transfer Characteristics 80 60 60 40 TC = 125_C 20 25_C - 55_C 30 4V 0 0 2 4 6 8 10 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 160 TC = - 55_C r DS(on) - On-Resistance ( W ) 0.025 0.030 On-Resistance vs. Drain Current g fs - Transconductance (S) 120 25_C 0.020 VGS = 4.5 V VGS = 10 V 125_C 80 0.015 0.010 40 0.005 0 0 10 20 30 40 50 60 70 80 90 0.000 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 6000 10 Gate Charge V GS - Gate-to-Source Voltage (V) 5000 C - Capacitance (pF) Ciss 4000 8 VDS = 50 V ID = 60 A 6 3000 4 2000 1000 Crss 2 Coss 0 0 20 40 60 80 100 0 0 10 20 30 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) Document Number: 71928 S-03600--Rev. B, 31-Mar-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP60N10-16L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.5 VGS = 10 V ID = 30 A r DS(on) - On-Resistance (W) (Normalized) 2.0 I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.5 10 TJ = 150_C TJ = 25_C 1.0 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature 130 125 ID = 10 mA V (BR)DSS (V) 120 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 71928 S-03600--Rev. B, 31-Mar-03 SUP60N10-16L Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 80 70 60 I D - Drain Current (A) I D - Drain Current (A) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 100 10 ms 100 ms 10 Limited by rDS(on) 1000 Safe Operating Area 1 ms 10 ms 100 ms dc 1 TC = 25_C Single Pulse TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (sec) Document Number: 71928 S-03600--Rev. B, 31-Mar-03 www.vishay.com 5 |
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